IRF840I N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

IRF840I RoHS-compliant Product Advanced Power Electronics Corp.▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N.
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable The TO-220CFM isolation packag.

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Datasheet Specifications

Part number: IRF840I
Manufacturer: Advanced Power Electronics
File Size: 271.26 KB
Datasheet: IRF840I-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 ±20 8 5.1 32 35 2 Units V

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IRF840I N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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