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IRF630 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

IRF630 Description

Advanced Power Electronics Corp.▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF630 RoHS-compliant Product N-CHA.
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost.

IRF630 Applications

* The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G DS TO-220(P) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain

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Datasheet Details

Part number
IRF630
Manufacturer
Advanced Power Electronics
File Size
90.76 KB
Datasheet
IRF630-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics IRF630-like datasheet