IRF630 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF630 RoHS-compliant Product N-CHA.
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost.

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Datasheet Specifications

Part number: IRF630
Manufacturer: Advanced Power Electronics
File Size: 90.76 KB
Datasheet: IRF630-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G DS TO-220(P) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain

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IRF630 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Advanced Power Electronics IRF630-like datasheet