IRF830P-HF-3 Datasheet, Mosfet, Advanced Power Electronics

PDF File Details

Part number:

IRF830P-HF-3

Manufacturer:

Advanced Power Electronics

File Size:

81.89kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effecti

Datasheet Preview: IRF830P-HF-3 📥 Download PDF (81.89kb)
Page 2 of IRF830P-HF-3 Page 3 of IRF830P-HF-3

IRF830P-HF-3 Application

  • Applications where a small PCB footprint or an attached heatsink is required. This device is well suited for low voltage applications such as DC/DC

TAGS

IRF830P-HF-3
N-CHANNEL
ENHANCEMENT
MODE
POWER
MOSFET
Advanced Power Electronics

📁 Related Datasheet

IRF830PBF - POWER MOSFET (International Rectifier)
• Lead-Free PD - 94881 IRF830PbF .irf. 1 12/10/03 IRF830PbF 2 .irf. IRF830PbF .irf. 3 IRF830PbF 4 .irf. IRF830PbF ww.

IRF830PBF - N-Channel Type Power MOSFET (Thinki Semiconductor)
IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V ̰ Gate C.

IRF830 - PowerMOS transistor (NXP)
Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Hig.

IRF830 - N-Channel Power MOSFET (STMicroelectronics)
® IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET TYPE IRF830 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 4.5 A TYPICAL RDS(on) .

IRF830 - N-CHANNEL ENHANCEMENT MODE MOSFET (TRSYS)
.

IRF830 - N-Channel Power MOSFET (Intersil Corporation)
IRF830 Data Sheet July 1999 File Number 1582.3 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .

IRF830 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF830 - Power MOSFET (International Rectifier)
.

IRF830 - N-Channel Enhancement Mode Power MOS Transistors (Comset Semiconductors)
SEMICONDUCTORS IRF830 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in off.

IRF830 - Power MOSFET (Vishay)
Power MOSFET IRF830, SiHF830 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts