IRF8301MPbF, IRF8301MTRPBF Power MOSFET

International Rectifier

Description

StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra-low Package Inductance l Optimized fo.
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resis.

📥 Download Datasheet

IRF8301MPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF8301MPbF, IRF8301MTRPBF. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRF8301MPbF, IRF8301MTRPBF
Manufacturer: International Rectifier
File Size: 353.67 KB
Datasheet: IRF8301MTRPBF-InternationalRectifier.pdf
Description: Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IRF8301MPbF, IRF8301MTRPBF.
Please refer to the document for exact specifications by model.

Features

* 00 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 01 10 100 VDS, Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area 3.0 Typical VGS(th) Gate threshold Voltage (V) 160 2.5 120 2.0 80 40 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 13. Maximum Drain Current vs. Case Temperature

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

IRF8301MPbF Distributors

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IRF8301MTRPBF Power MOSFET International Rectifier

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