IRF8301MPbF Description
StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra-low Package Inductance l Optimized fo.
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resis.
IRF8301MPbF Features
* 00
1
Tc = 25°C Tj = 150°C Single Pulse 0.1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
3.0
Typical VGS(th) Gate threshold Voltage (V)
160 2.5
120 2.0
80
40
0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 13. Maximum Drain Current vs. Case Temperature
IRF8301MPbF Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t
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