IRF8308MTRPbF, IRF8308MPBF Datasheet - International Rectifier

IRF8308MTRPbF POWER MOSFET

The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF8308MPbF DirectFET Power MOSFET l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters 28nC 8.2nC 3.5nC 34nC 20nC 1.8V l Optimized for Sync. FET socket of Sync. Buck Converter.

IRF8308MTRPbF Features

* © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF8308MPbF ISD, Reverse Drain Current (A) ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000.0 100.0 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain

IRF8308MPBF-InternationalRectifier.pdf