Description
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- © 2014 International Rectifier Submit Datasheet Feedback
February 24, 2014
IRF8308MPbF
ISD, Reverse Drain Current (A)
ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ)
1000.0
100.0 10.0
TJ = 150°C TJ = 25°C TJ = -40°C
1.0
VGS = 0V 0.1
0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
150
ID, Drain-to-Source Current (A)
1000 100.