Description
IRF8308MPbF DirectFET Power MOSFET l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Low Profile (<.
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resi.
Features
* © 2014 International Rectifier Submit Datasheet Feedback
February 24, 2014
IRF8308MPbF
ISD, Reverse Drain Current (A)
ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ)
1000.0
100.0 10.0
TJ = 150°C TJ = 25°C TJ = -40°C
1.0
VGS = 0V 0.1
0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t