IRF830FI N-Channel MOSFET Transistor

Inchange Semiconductor

Description

isc N-Channel MOSFET Transistor IRF830FI .
Drain Current. ID= 3. Drain Source Voltage- : VDSS= 500V(Min). Static Drain-Source On-Resistance : RDS(on) = 1.

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Datasheet Specifications

Part number: IRF830FI
Manufacturer: Inchange Semiconductor
File Size: 231.23 KB
Datasheet: IRF830FI-InchangeSemiconductor.pdf
Description: N-Channel MOSFET Transistor

Applications

* Desinged for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3 A PD Power Dissipation@TC=25℃ 35 W Tj Max. Operating

IRF830FI Distributors

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IRF830FI N-Channel MOSFET Transistor Inchange Semiconductor

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