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IRF830FI

N-Channel MOSFET Transistor

IRF830FI General Description


*Drain Current

*ID= 3.0A@ TC=25℃
*Drain Source Voltage- : VDSS= 500V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Desinged for hi.

IRF830FI Datasheet (231.23 KB)

Preview of IRF830FI PDF

Datasheet Details

Part number:

IRF830FI

Manufacturer:

Inchange Semiconductor

File Size:

231.23 KB

Description:

N-channel mosfet transistor.

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IRF830FI N-Channel MOSFET Transistor Inchange Semiconductor

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