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IRF8301MTRPBF Power MOSFET

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Description

StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized fo.
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resis.

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Features

* 00 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 01 10 100 VDS, Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area 3.0 Typical VGS(th) Gate threshold Voltage (V) 160 2.5 120 2.0 80 40 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 13. Maximum Drain Current vs. Case Temperature

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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