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IRF8301MTRPBF

Power MOSFET

IRF8301MTRPBF Features

* 00 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 01 10 100 VDS, Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area 3.0 Typical VGS(th) Gate threshold Voltage (V) 160 2.5 120 2.0 80 40 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 13. Maximum Drain Current vs. Case Temperature

IRF8301MTRPBF General Description

The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with existing layout .

IRF8301MTRPBF Datasheet (353.67 KB)

Preview of IRF8301MTRPBF PDF

Datasheet Details

Part number:

IRF8301MTRPBF

Manufacturer:

International Rectifier

File Size:

353.67 KB

Description:

Power mosfet.
StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized fo.

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IRF8301MTRPBF Power MOSFET International Rectifier

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