IRF8301MTRPBF
International Rectifier
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Power mosfet. The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very l
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IRF8301MPbF - Power MOSFET
(International Rectifier)
StrongIRFET IRF8301MTRPbF
l Ultra-low RDS(on) l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible l Ultra-low Package Inductance
l Optimized fo.
IRF830 - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Hig.
IRF830 - N-Channel Power MOSFET
(STMicroelectronics)
®
IRF830
N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET
TYPE IRF830
s s s s s
V DSS 500 V
R DS(on) < 1.5 Ω
ID 4.5 A
TYPICAL RDS(on) .
IRF830 - N-CHANNEL ENHANCEMENT MODE MOSFET
(TRSYS)
.
IRF830 - N-Channel Power MOSFET
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IRF830
Data Sheet July 1999 File Number
1582.3
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field .
IRF830 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF830 - Power MOSFET
(International Rectifier)
.
IRF830 - N-Channel Enhancement Mode Power MOS Transistors
(Comset Semiconductors)
SEMICONDUCTORS
IRF830 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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N channel in a plastic TO220 package. They are intended for use in off.
IRF830 - Power MOSFET
(Vishay)
Power MOSFET
IRF830, SiHF830
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
38.
IRF830 - Power Field Effect Transistor
(ON Semiconductor)
IRF830
Power Field Effect Transistor
N−Channel Enhancement Mode Silicon Gate TMOS
This TMOS Power FET is designed for high voltage, high speed power .