IRF8308MPBF POWER MOSFET

International Rectifier

Description

IRF8308MPbF DirectFET Power MOSFET l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Low Profile (<.
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resi.

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Datasheet Specifications

Part number: IRF8308MPBF
Manufacturer: International Rectifier
File Size: 285.31 KB
Datasheet: IRF8308MPBF-InternationalRectifier.pdf
Description: POWER MOSFET

Features

* © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF8308MPbF ISD, Reverse Drain Current (A) ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000.0 100.0 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF8308MPBF POWER MOSFET International Rectifier

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