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IRF8302MPBF Power MOSFET

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Description

IRF8302MPbF l RoHs Compliant and Halogen-Free  l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ul.
The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state res.

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Features

* Current (A) Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage 4 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback February 17, 2014 ISD, Reverse Drain Current (A) 1000 100 10 TJ = 150°C 1 TJ = 25°C TJ = -40°C VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therm

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