IRF8302MPBF Datasheet (International Rectifier)

IRF8302MPBF, Power MOSFET

The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET® package is compatible with existing layout geometries us

IRF8302MPbF l RoHs Compliant and Halogen-Free l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching HEXFET® Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters 35nC 8.9nC 5.1nC 40nC 29nC 1.8V l Optimized

IRF8302MPBF Features

* Current (A) Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 17, 2014 ISD, Reverse Drain Current (A) 1000 100 10 TJ = 150°C 1 TJ = 25°C TJ = -40°C VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0