IRF8304MPBF Datasheet - International Rectifier

IRF8304MPBF Power MOSFET

The IRF8304MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries .

IRF8304MPbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.FET and some Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested DirectFET® Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V ma.

IRF8304MPBF Features

* 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Current (A) IRF8304MPbF 1000 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 10 1msec 1 10msec DC 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01

IRF8304MPBF-InternationalRectifier.pdf