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IRF830I-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

IRF830I-HF General Description

APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 .

IRF830I-HF Datasheet (105.11 KB)

Preview of IRF830I-HF PDF

Datasheet Details

Part number:

IRF830I-HF

Manufacturer:

Advanced Power Electronics

File Size:

105.11 KB

Description:

N-channel enhancement mode power mosfet.
IRF830I-HF Halogen-Free Product Advanced Power Electronics Corp. Ease of Paralleling Fast Switching Characteristic Simple Drive Requirement RoHS Comp.

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TAGS

IRF830I-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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