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IRF840L - Power MOSFET

IRF840L Description

Power MOSFET IRF840L, SiHF840L Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V .
Third generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance a.

IRF840L Features

* Halogen-free According to IEC 61249-2-21 Definition
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements

IRF840L Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W. I2PAK (TO-262) SiHF840L-GE3 IRF840LPbF SiHF840L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed

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Power MOSFET Vishay
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