IRF840LCS Power MOSFET

International Rectifier

Description

PD- 93766 IRF840LCS IRF840LCL HEXFET® Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced .
This new series of low charge HEXFET® power MOSFETs achieve significant lower gate charge over conventional MOSFETs.

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Datasheet Specifications

Part number: IRF840LCS
Manufacturer: International Rectifier
File Size: 173.94 KB
Datasheet: IRF840LCS_InternationalRectifier.pdf
Description: Power MOSFET

Features

* 0071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg. , 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2,

Applications

* Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. These device improvements combined with the proven ruggedness and reliability that characterize of HEXFET power MOSFETs offer the designer a new power transistor standard for switching applications. D2Pak IRF84

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IRF840LCS Power MOSFET International Rectifier

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