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IRF840B - 500V N-Channel MOSFET

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Fairchild Semiconductor

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IRF840B 500V N-Channel MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRF840B

Datasheet Details

Part number	IRF840B
Manufacturer	Fairchild Semiconductor
File Size	919.65 KB
Description	500V N-Channel MOSFET
Datasheet	IRF840B Datasheet
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Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V.
Low gate charge ( typical 41 nC).
Low Crss ( typical 35 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D GD S TO-220 IRF Series GD S TO-220F IRFS Series G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS.

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Published: Apr 16, 2005 |