IRF840B Datasheet - Fairchild Semiconductor

IRF840B - 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRF840B Features

* 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V

* Low gate charge ( typical 41 nC)

* Low Crss ( typical 35 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GD S TO-220 IRF Series GD S TO-220F IRFS Series G S Absolute Maximum R

IRF840B_FairchildSemiconductor.pdf