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IRF840S - Power MOSFET

IRF840S Description

$GYDQFHG 3RZHU 026)(7 IRF840S .

IRF840S Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max. ) @ VDS = 500V
* Lower RDS(ON): 0.638Ω (Typ. ) Absolute Maximum Rati

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Fairchild Semiconductor IRF840S-like datasheet