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IRF840S Power MOSFET

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Description

www.vishay.com IRF840S, SiHF840S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.(nC) Qgs (nC) Qgd (nC) Configuration 5.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resis.

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Features

* Surface mount
* Available in tape and reel
* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Fast switching
* Ease of paralleling
* Simple drive requirement Available
* Material categorization: for definitions o

Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF840S-GE3 Lead (Pb)-free Note a. See device orientation. IRF840SPbF SiHF840S-E3 D2PAK (TO-2

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