IRLS520A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRLS520A
Manufacturer	Fairchild Semiconductor
File Size	282.08 KB
Description	Advanced Power MOSFET
Datasheet	IRLS520A_FairchildSemiconductor.pdf

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.176Ω (Typ. ) IRLS520A BVDSS = 100 V RDS(on) = 0.22Ω ID = 7.2 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current.

📁 IRLS520A Similar Datasheet

IRLS-G5653 - INTEGRATED SWITCHER (International Rectifier)
IRLS3034-7PPBF - 40V Single N-Channel HEXFET Power MOSFET (International Rectifier)
IRLS3034PBF - 40V Single N-Channel HEXFET Power MOSFET (International Rectifier)
IRLS3036 - N-Channel MOSFET (INCHANGE)
IRLS3036-7PPBF - 60V Single N-Channel HEXFET Power MOSFET (International Rectifier)
IRLS3036PBF - 60V Single N-Channel HEXFET Power MOSFET (International Rectifier)
IRLS3813 - N-Channel MOSFET (INCHANGE)
IRLS3813PBF - POWER MOSFET (International Rectifier)

Other Datasheets by Fairchild Semiconductor

Published: Dec 23, 2006 |