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MTP2955V - P-Channel MOSFET

MTP2955V Description

MTP2955V May 1999 DISTRIBUTION GROUP * MTP2955V P-Channel Enhancement Mode Field Effect Transistor General .
This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.

MTP2955V Features

* • -12 A, -60 V. RDS(ON) = 0.230 Ω @ VGS = -10 V • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. 6
* ' 6 72

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