MTP2955E Datasheet - Motorola

MTP2955E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP2955E Motorola Preferred Device P Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switchi.

MTP2955E Features

* a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figur

MTP2955E Datasheet (207.41 KB)