P5N80 Datasheet - Fairchild Semiconductor

P5N80 FQP5N80

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

P5N80 Features

* 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V

* Low gate charge ( typical 25 nC)

* Low Crss ( typical 11 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability GDS TO-220 FQP Series D ! " 35 G! " " ! S Absolute Maximum Ratings TC

P5N80-FairchildSemiconductor.pdf