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P5N80 FQP5N80

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Description

FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Features

* 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V
* Low gate charge ( typical 25 nC)
* Low Crss ( typical 11 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability GDS TO-220 FQP Series D ! " 35 G! " " ! S Absolute Maximum Ratings TC

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