P5N80 - FQP5N80

Fairchild Semiconductor

Datasheet Details

Part number	P5N80
Manufacturer	Fairchild Semiconductor
File Size	659.36 KB
Description	FQP5N80
Datasheet	P5N80-FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V.
Low gate charge ( typical 25 nC).
Low Crss ( typical 11 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability GDS TO-220 FQP Series D ! " 35 G! " " ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curre.

📁 P5N80 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: May 24, 2015 |