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QRB1134 - PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS

Description

The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing.

The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view.

Features

  • Phototransistor output.
  • High Sensitivity.
  • Low cost plastic housing.
  • #26 AWG, 24 inch PVC wire termination.
  • Infrared transparent plastic covers for dust protection  2001 Fairchild Semiconductor Corporation DS300351 7/02/01 1 OF 4 www. fairchildsemi. com.

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PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS QRB1133 PACKAGE DIMENSIONS QRB1134 0.420 (10.67) 24.0 (609.60) MIN #26 AWG (A) 0.328 (8.33) 0.150 (3.81) NOM E (K) 0.226 (5.74) 0.373 (9.47) 0.703 (17.86) (E) (C) S 0.020 (0.51) 4X 0.300 (7.62) 0.150 (3.81) MIN 0.603 (15.32) REFLECTIVE SURFACE 0.210 (5.33) FUNCTION (C) COLLECTOR (E) EMITTER (K) CATHODE (A) ANODE WIRE COLOR WHITE BLUE GREEN ORANGE SCHEMATIC NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. A K C E DESCRIPTION The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing.
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