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SSR1N50B, SSR-1N5 Datasheet - Fairchild Semiconductor

SSR1N50B 520V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSR1N50B Features

* 1.3A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G S D-PAK SSR Series I-PAK G D S SSU Seri

SSR-1N5-0B.pdf

This datasheet PDF includes multiple part numbers: SSR1N50B, SSR-1N5. Please refer to the document for exact specifications by model.
SSR1N50B Datasheet Preview Page 2 SSR1N50B Datasheet Preview Page 3

Datasheet Details

Part number:

SSR1N50B, SSR-1N5

Manufacturer:

Fairchild Semiconductor

File Size:

634.92 KB

Description:

520v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SSR1N50B, SSR-1N5.
Please refer to the document for exact specifications by model.

SSR1N50B Distributor

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