SSR2N60B, SSR-2N6 - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SSR2N60B, SSR-2N6
Manufacturer	Fairchild Semiconductor
File Size	644.85 KB
Description	600V N-Channel MOSFET
Datasheet	SSR-2N6-0B.pdf
Note	This datasheet PDF includes multiple part numbers: SSR2N60B, SSR-2N6. Please refer to the document for exact specifications by model.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

1.8A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuou.

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Published: Nov 11, 2005 |