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SSR1N60B Datasheet - Fairchild Semiconductor

SSR1N60B 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

SSR1N60B Features

* 0.9A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D-PAK SSR Series I-PAK G D S SSU Series

SSR1N60B Datasheet (637.04 KB)

Preview of SSR1N60B PDF

Datasheet Details

Part number:

SSR1N60B

Manufacturer:

Fairchild Semiconductor

File Size:

637.04 KB

Description:

600v n-channel mosfet.

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SSR1N60B 600V N-Channel MOSFET Fairchild Semiconductor

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