SSW2N80A - Advanced Power MOSFET
SSW2N80A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ.) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2.