* Monolithic Construction with Built-in Base-Emitter Shunt Resistors
* High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum)
* Collector-Emitter Sustaining Voltage
* Low Collector-Emitter Saturation Voltage
* Industrial Use
* Complementary
TIP105
Fairchild Semiconductor
211.20 KB
Pnp epitaxial silicon darlington transistor.
TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor December 2014 TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor Fea.
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