* Monolithic Construction with Built-in Base-Emitter Shunt Resistors
* High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum)
* Low Collector-Emitter Saturation Voltage
* Industrial Use
* Complementary to TIP110 / TIP111 / TIP112 Equivalent Circui
TIP117
Fairchild Semiconductor
210.49 KB
Pnp epitaxial silicon darlington transistor.
TIP115 / TIP117
* PNP Epitaxial Silicon Darlington Transistor
November 2014
TIP115 / TIP117 PNP Epitaxial Silicon Darlington Transistor
Fea.
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