TIP117 Datasheet - Fairchild Semiconductor

TIP117 PNP Epitaxial Silicon Darlington Transistor

TIP117 Features

* Monolithic Construction with Built-in Base-Emitter Shunt Resistors

* High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum)

* Low Collector-Emitter Saturation Voltage

* Industrial Use

* Complementary to TIP110 / TIP111 / TIP112 Equivalent Circui

Datasheet Details

TIP117

Fairchild Semiconductor

210.49 KB

Pnp epitaxial silicon darlington transistor.

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