* Monolithic Construction with Built-in Base-Emitter Shunt Resistors
* Complementary to TIP115 / TIP116 / TIP117
* High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum)
* Low Collector-Emitter Saturation Voltage
* Industrial Use Ordering Information
TIP112
Fairchild Semiconductor
205.06 KB
Npn epitaxial silicon darlington transistor.
TIP110 / TIP111 / TIP112
* NPN Epitaxial Silicon Darlington Transistor
November 2014
TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlingt.
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