IRFS250B 200V N-Channel MOSFET

Fairchild

Description

IRFS250B November 2001 IRFS250B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number: IRFS250B
Manufacturer: Fairchild
File Size: 654.35 KB
Datasheet: IRFS250B_Fairchild.pdf
Description: 200V N-Channel MOSFET

Features

* 21.3A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* ◀ ▲
* G! G D S TO-3PF IRFS Series ! S Absolute Ma

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📁 Related Datasheet

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IRFS250B 200V N-Channel MOSFET Fairchild

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