IRFS250B Datasheet - Fairchild

IRFS250B - 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a

IRFS250B Features

* 21.3A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! G D S TO-3PF IRFS Series ! S Absolute Ma

IRFS250B_Fairchild.pdf