IRFS254B Datasheet - Fairchild

IRFS254B - 250V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a

IRFS254B Features

* 16A, 250V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

* ◀ ▲

* G! G D S TO-3PF IRFS Series ! S Absolute Maxi

IRFS254B_Fairchild.pdf