MJE340 Datasheet | Fairchild Semiconductor

High Voltage General Purpose Applications - High Collector-Emitter Breakdown Voltage - Suitable for Transformer - plement to MJE350 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 300 300 5 500 20 150 - 65 ~ 150 Units V V V m A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO h FE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 1m A, IB = 0 VCB = 300V, IE =0 VBE = 3V, IC = 0 VCE = 10V, IC = 50m A 30 Min. 300 Max. 100 100 240 Units V µA µA ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = 2V IC = 10IB 1.0 h FE, DC CURRENT GAIN V BE(sat) V CE(sat) 1 1 10 100 1000 0.0 10 100 1000 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC[A], COLLECTOR...