Datasheet Details
Part number:
MJE801
Manufacturer:
Fairchild
File Size:
51.87 KB
Description:
NPN Transistor
MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors * High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC * Complement to MJE700/701/702/703 1 TO-126 2.Collector 3.Base 1.
Emitter NPN Epitaxial Silicon Darlington Transistor
MJE801_FairchildSemiconductor.pdf
MJE801, NPN Transistor
MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703 1 TO-126 2.Collector 3.Base 1.
Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base C
MJE801 Distributor
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