Datasheet4U Logo Datasheet4U.com

MJE801 Datasheet - Fairchild

MJE801 NPN Transistor

MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base C.

MJE801 Datasheet (51.87 KB)

Preview of MJE801 PDF
MJE801 Datasheet Preview Page 2 MJE801 Datasheet Preview Page 3

Datasheet Details

Part number:

MJE801

Manufacturer:

Fairchild

File Size:

51.87 KB

Description:

Npn transistor.

📁 Related Datasheet

MJE800 NPN Transistor (Fairchild)

MJE800 4.0 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)

MJE800 DARLINGTON POWER TRANSISTORS (ON)

MJE800 NPN Transistor (INCHANGE)

MJE800 (MJE800 - MJE803) SILICON POWER TRANSISTOR (SavantIC)

MJE800 Transistor (Central Semiconductor)

MJE800G Plastic Darlington Complementary Silicon Power Transistors (ON Semiconductor)

MJE800T NPN Transistor (INCHANGE)

TAGS

MJE801 NPN Transistor Fairchild

MJE801 Distributor