MJE800G Datasheet - ON Semiconductor

MJE800G Plastic Darlington Complementary Silicon Power Transistors

MJE800G Features

* High DC Current Gain

* hFE = 2000 (Typ) @ IC = 2.0 Adc

* Monolithic Construction with Built

* in Base

* Emitter Resistors to Limit Leakage

* Multiplication

* Choice of Packages

* MJE700 and MJE800 Series

* These Devices are Pb

Datasheet Details

MJE800G

125.95 KB

Plastic darlington complementary silicon power transistors.

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