* High DC Current Gain
* hFE = 2000 (Typ) @ IC = 2.0 Adc
* Monolithic Construction with Built
* in Base
* Emitter Resistors to Limit Leakage
* Multiplication
* Choice of Packages
* MJE700 and MJE800 Series
* These Devices are Pb
MJE803G
125.95 KB
Plastic darlington complementary silicon power transistors.
MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)
Plastic Darlington Complementary Silicon Power Transistors
These devices are designe.
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