MJE803G Datasheet, Transistors, ON Semiconductor

MJE803G Features

  • Transistors
  • High DC Current Gain
  • hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Monolithic Construction with Built
  • in Base
  • Emitter Resistors to Limit Leakage

PDF File Details

Part number:

MJE803G

Manufacturer:

ON Semiconductor ↗

File Size:

125.95kb

Download:

📄 Datasheet

Description:

Plastic darlington complementary silicon power transistors.

Datasheet Preview: MJE803G 📥 Download PDF (125.95kb)
Page 2 of MJE803G Page 3 of MJE803G

MJE803G Application

  • Applications Features
  • High DC Current Gain
  • hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Monolithic Construction with Built

TAGS

MJE803G
Plastic
Darlington
Complementary
Silicon
Power
Transistors
ON Semiconductor

📁 Related Datasheet

MJE803 - SILICON NPN POWER DARLINGTON TRANSISTORS (ST Microelectronics)
MJE802 MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-ba.

MJE803 - NPN Epitaxial Silicon Darlington Transistor (Fairchild)
MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 .

MJE803 - 4.0 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D PNP Plastic Darlington Complementary Silicon Power Transistors . . . designe.

MJE803 - DARLINGTON POWER TRANSISTORS (ON)
.. MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devi.

MJE803 - (MJE800 - MJE803) SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package .. ·Complement to type .

MJE803 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ .

MJE803 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (Central Semiconductor)
MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRA.

MJE803T - POWER TRANSISTOR (Central Semiconductor)
MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CE.

MJE803T - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ .

MJE800 - NPN Transistor (Fairchild)
MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 .

Stock and price

part
onsemi
TRANS NPN DARL 80V 4A TO-126
DigiKey
MJE803G
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts