Datasheet4U Logo Datasheet4U.com

MMBT5086 - PNP General Purpose Amplifier

📥 Download Datasheet

Datasheet preview – MMBT5086

Datasheet Details

Part number MMBT5086
Manufacturer Fairchild
File Size 100.03 KB
Description PNP General Purpose Amplifier
Datasheet download datasheet MMBT5086 Datasheet
Additional preview pages of the MMBT5086 datasheet.

📁 Similar Datasheet

  • MMBT5086 - PNP (LOW NOISE TRANSISTOR) (Samsung)
  • MMBT5087 - PNP (LOW NOISE TRANSISTOR) (Samsung)
  • MMBT5087 - PNP General Purpose Amplifier (ON Semiconductor)
  • MMBT5087 - PNP Silicon Epitaxial Planar Transistor (SEMTECH)
  • MMBT5087 - SMD General Purpose Low Noise Transistor (TAITRON)
  • MMBT5087 - PNP Silicon Epitaxial Planar Transistor (CHINA BASE)
  • MMBT5087 - PNP Transistors (Kexin)
  • MMBT5087L - Low Noise Transistor (ON Semiconductor)
  • MMBT5087LT1 - Low Noise Transistor (Motorola)
  • MMBT5088 - NPN (LOW NOISE TRANSISTOR) (Samsung)
Other Datasheets by Fairchild

Full PDF Text Transcription

Click to expand full text
2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 1 Mark: 2Q 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value -50 -50 -3.0 -100 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2.
Published: |