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MMBT918 NPN RF Transistor

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Description

PN918 / MMBT918 Discrete POWER & Signal Technologies PN918 MMBT918 C E C B TO-92 E SOT-23 Mark: 3B B NPN RF Transistor This device is designed.

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Applications

* involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN918 350 2.8 125 357 Max
* MMBT91

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