NDB5060 Datasheet, Mosfet, Fairchild

NDB5060 Features

• Mosfet 26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external

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NDB5060

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Fairchild

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📄 Datasheet

Description:

N-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS t

NDB5060 Application

• Applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power lo

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NDB5060

Fairchild

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