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NDB508AE N-Channel MOSFET

NDB508AE Description

May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE N-Channel Enhancement Mode Field Effect Transistor General D.
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDB508AE Features

* 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/i

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N-Channel MOSFET Fairchild
Fairchild NDB508AE-like datasheet