Datasheet Specifications
- Part number
- NDB508AE
- Manufacturer
- Fairchild
- File Size
- 73.44 KB
- Datasheet
- NDB508AE_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE N-Channel Enhancement Mode Field Effect Transistor General D.Features
* 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/iNDB508AE Distributors
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