NDB510BE N-Channel MOSFET

Fairchild

Description

May 1994 NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE N-Channel Enhancement Mode Field Effect Transistor General D.
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDB510BE
Manufacturer: Fairchild
File Size: 72.50 KB
Datasheet: NDB510BE_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/

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NDB510BE N-Channel MOSFET Fairchild

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