NDB7061 Datasheet - Fairchild

NDB7061, N-Channel MOSFET

May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect

Features

* 64A, 60V. RDS(ON) = 0.016Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low

NDB7061_FairchildSemiconductor.pdf