NDB7061L Datasheet - Fairchild

NDB7061L N-Channel MOSFET

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withsta.

NDB7061L Features

* 60 A, 60 V. RDS(ON) = 0.018 Ω @ VGS= 5 V RDS(ON) = 0.013 Ω @ VGS= 10 V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperatur

NDB7061L Datasheet (359.68 KB)