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NDB708A Datasheet - Fairchild

N-Channel MOSFET

NDB708A Features

* 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million

NDB708A General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDB708A Datasheet (74.91 KB)

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Datasheet Details

Part number:

NDB708A

Manufacturer:

Fairchild

File Size:

74.91 KB

Description:

N-channel mosfet.
May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General D.

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NDB708A N-Channel MOSFET Fairchild

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