NDB708AE Datasheet - Fairchild

NDB708AE, N-Channel MOSFET

May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor General D

Features

* 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million

NDB708AE_FairchildSemiconductor.pdf