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NDB710AE Datasheet - Fairchild

N-Channel MOSFET

NDB710AE Features

* 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 millio

NDB710AE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDB710AE Datasheet (74.01 KB)

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Datasheet Details

Part number:

NDB710AE

Manufacturer:

Fairchild

File Size:

74.01 KB

Description:

N-channel mosfet.
May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General D.

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