NDBA170N06A - N-Channel Power MOSFET

ON Semiconductor

Datasheet Details

On-resistance RDS(on)=2.5mΩ(typ. ).
Input Capacitance Ciss=15800pF(typ. ).
Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C VGSS ID IDL IDP PD Junction Temperature Tj Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 Avala.

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Published: Feb 9, 2016 |