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NDC7003P - Dual P-Channel MOSFET

General Description

These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

Key Features

  • -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. ____________________________________________________________________________________________ 4 3 5 2 6 SOT-6 (SuperSOTTM-6) 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage - Continuous Drai.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch. Features -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current.