Datasheet4U Logo Datasheet4U.com

NDC631N - N-Channel MOSFET

General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance.

Key Features

  • 4.1 A, 20 V. RDS(ON) = 0.06 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS =2.7 V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 4 3 5 2 6 1 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol Parameter VDSS VGSS.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NDC25170A SiC Schottky Diode ON Semiconductor
NDC300RA Integrated Driver and MOSFET NIKO-SEM
NDC301RA Integrated Driver and MOSFET NIKO-SEM
NDC7001C Dual N&P-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
NDC632 P-Channel MOSFET
NDC632P P-Channel MOSFET
NDC651N N-Channel MOSFET
NDC652 P-Channel MOSFET
NDC652P P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
July 1996 NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features 4.1 A, 20 V. RDS(ON) = 0.06 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS =2.7 V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.