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NDC651N - N-Channel MOSFET

General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance.

Key Features

  • 3.2A, 30V. RDS(ON) = 0.09Ω @ VGS = 4.5V RDS(ON) = 0.06Ω @ VGS = 10V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 4 3 5 2 6 1 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol Parameter VDSS VGSS ID PD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features 3.2A, 30V. RDS(ON) = 0.09Ω @ VGS = 4.5V RDS(ON) = 0.06Ω @ VGS = 10V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.