NDC652 - P-Channel MOSFET

Product Overview

Fairchild

Datasheet Details

Part number	NDC652
Manufacturer	Fairchild
File Size	247.81 KB
Description	P-Channel MOSFET
Datasheet	NDC652 Datasheet
Additional preview pages of the NDC652 datasheet.

Product details

Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

Features

-2.4A, -30V. RDS(ON) = 0.18Ω @ VGS = -4.5V RDS(ON) = 0.11Ω @ VGS = -10V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 4 3 5 2 6 1 Absolute Maximum Ratings Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Sou.

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Published: May 12, 2005 |