NDP7050 Datasheet - Fairchild

NDP7050, N-Channel Enhancement Mode Field Effect Transistor

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

* 75A, 50V. RDS(ON) = 0.013Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low

NDP7050_FairchildSemiconductor.pdf